View TEA5591_1714067.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

d a t a sh eet product speci?cation file under integrated circuits, ic01 june 1989 integrated circuits TEA5591 am/fm radio receiver circuit
june 1989 2 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5591 general description the TEA5591 is an integrated radio circuit which is designed for use in portable receivers and clock radios. the ic is also applicable to mains-fed am an am/fm receivers and car radio-receivers. the main advantage of this ic is its ability to operate over a wide range of supply voltages without loss of performance. the am circuit incorporates a balanced mixer and a one-pin oscillator, which operates in the 0.6 mhz to 30 mhz frequency range, with amplitude control. the circuit also includes an if amplifier, a detector and an agc circuit which controls the if amplifier and the mixer. the fm circuit incorporates an rf amplifier, a balanced mixer and a one-pin oscillator together with two ac coupled if amplifiers (with distributed selectivity), a quadrature demodulator for the ceramic filter and internal afc. features dc am/fm switch facility three internal separate stabilizers to enable operation over a wide range of supply voltages (1.8 to 15 v) all pins (except pin 9) are esd protected. quick reference data package outline 20-lead dil; plastic (sot146); sot146-1; 1996 august 14. parameter conditions symbol min. typ. max. unit supply voltage (pin 8) v p 1.8 3.0 15 v supply current am part i p (am) - 14 19 ma fm part i p (fm) - 17 23 ma operating ambient temperature range t amb - 15 -+ 60 c am performance (pin 13) m = 0.3 rf sensitivity rf input voltage v o = 10 mv v i - 3.5 -m v rf input voltage (s + n)/n = 26 db v i - 17 -m v signal plus noise-to-noise ratio v i = 1 mv (s + n)/n - 48 - db af output voltage v o - 50 - mv total harmonic distortion thd - 0.7 - % fm performance (pin 1) d f = 22.5 khz rf sensitivity rf input voltage - 3 db before limiting v i - 2.3 4.0 m v signal plus noise-to-noise ratio for: rf input signal voltage (v i )v i = 3.0 m v(s + n)/n 23 26 - db v i = 1 mv (s + n)/n - 60 - db af output voltage v i = 100 m vv o 75 90 - mv total harmonic distortion thd - 0.8 - %
june 1989 3 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5591 fig.1 block diagram.
june 1989 4 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5591 fig.2 equivalent circuit diagram.
june 1989 5 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5591 pinning fig.3 pinning diagram.
june 1989 6 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5591 ratings limiting values in accordance with the absolute maximum system (iec 134) parameter conditions symbol min. max. unit supply voltage (pin 8) v p - 18 v storage temperature range t stg - 65 + 150 c operating ambient temperature range t amb - 15 + 60 c total power dissipation p tot see fig.4 fig.4 power derating curve.
june 1989 7 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5591 dc characteristics all voltages are referenced to pin 3; all input currents are positive; all parameters are measured in fig.5 at nominal supply voltage v p = 3 v; t amb = 25 c unless otherwise speci?ed parameter conditions symbol min. typ. max. unit supply voltage v p 1.8 3.0 15 v voltages (fm) pin 1 v 1 - 0.90 - v pin 2 v 2 - 1.60 - v pin 4 v 4 - 0.85 - v pin 5 v 5 1.5 1.60 1.75 v pin 6 v 6 - 1.48 - v pin 9 v 9 - 1.05 - v pin 14 v 14 - 1.63 - v pin 17 v 17 - 0.60 - v pin 19 v 19 - 1.60 - v voltages (am) pin 2 v 2 - 1.10 - v pin 12 v 12 - 1.60 - v pin 15 v 15 - 1.54 - v supply current am part i p(am) - 14 19 ma fm part i p(fm) - 17 23 ma
june 1989 8 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5591 ac characteristics v p = 3 v; t amb = 25 c unless otherwise speci?ed parameter conditions symbol min. typ. max. unit am part input conductance pin 4 f = 0.5 mhz g ie - 1.7 - ms input capacitance pin 4 f = 0.5 mhz c ie - 5 - pf input conductance pin 13 f = 1.0 mhz g ie - 230 -m s input capacitance pin 13 f = 1.0 mhz c ie - 13 - pf output conductance pin 7 f = 0.5 mhz g oe - 4 -m s output capacitance pin 7 f = 0.5 mhz c oe - 4.7 - pf conductance pin 11 f = 1.5 mhz g e -- 6.8 - ms capacitance pin 11 f = 1.5 mhz c e - 25 - pf fm part input conductance pin 4 f = 10.7 mhz g ie - 2.7 - ms input capacitance pin 4 f = 10.7 mhz c ie - 6 - pf input conductance pin 14 f = 10.7 mhz g ie - 2.8 - ms input capacitance pin 14 f = 10.7 mhz c ie - 2.5 - pf output conductance pin 6 f = 10.7 mhz g oe - 2.8 - ms output capacitance pin 6 f = 10.7 mhz c oe - 3.0 - pf output conductance pin 16 f = 10.7 mhz g oe - 1.6 -m s output capacitance pin 16 f = 10.7 mhz c oe - 4.5 - pf conductance pin 9 f = 10.7 mhz g e - 880 -m s capacitance pin 9 f = 10.7 mhz c e - 3.6 - pf conductance pin 18 f = 100 mhz g e -- 4 - ms capacitance pin 18 f = 100 mhz c e - 10 - pf
june 1989 9 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5591 ac characteristics all parameters are measured in fig.5 at nominal supply voltage v p = 3 v; t amb = 25 c unless otherwise speci?ed. rf conditions: input frequency 1 mhz; 30% modulation where f mod = 1 khz; unless otherwise speci?ed parameter conditions symbol min. typ. max. unit am performance rf sensitivity af output voltage for: v i = 7.5 m v no agc v o 16 30 40 mv noise signal plus noise-to-noise ratio for: rf input signal voltage of v i = 17 m v(s + n)/n 23 26 - db v i = 1 mv (s + n)/n - 48 - db optimum source impedance z s - 1.8 - k w noise factor optimum noise impedance nf - 4 - db agc change in rf input voltage for 10 db change in output voltage v i1 = 100 mv v i1 /v i2 80 86 - db af output voltage v i = 100 m vv o 40 50 60 mv total harmonic distortion v i = 100 m v to 10 mv thd - 0.7 1.5 % v i = 100 m v to 10 mv; m = 0.8 thd - 35% v i = 80 mv; m = 0.8 thd -- 8%
june 1989 10 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5591 transimpedance (z tr ) = v 4 /i 7 = 900 w . if suppression (note 1) v o = 30 mv a- 20 - db oscillator (pin 11) input voltage f osc = 1.5 mhz v osc - 150 190 mv f osc = 30.5 mhz v osc - 150 - mv v p = 1.5 v v osc 100 -- mv temperature behaviour - 15 to + 60 c (only the ic) sensitivity d v i -- 2 - db output voltage v i = 1 mv d v o - 1 - db oscillator frequency lw d f osc - 500 - hz mw d f osc - 300 - hz sw d f osc - 100 - khz supply voltage behaviour v p = 1.8 to 15 v sensitivity d v i - 0 - db output voltage v i = 1 mv d v o - 0.5 - db oscillator frequency lw d f osc - 6 - khz mw d f osc - 0.1 - khz sw d f osc - 30 - khz parameter conditions symbol min. typ. max. unit
june 1989 11 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5591 ac characteristics all parameters are measured in fig.5 at nominal supply voltage v p = 3 v; t amb = 25 c unless otherwise speci?ed rf conditions: input frequency 100 mhz; frequency deviation f = 22,5 khz and f mod = 1 khz parameter conditions symbol min. typ. max. unit fm performance rf sensitivity rf input voltage - 3 db before limiting v ifm - 2.3 4.0 m v noise signal plus noise-to-noise ratio for: rf input signal voltage (v i ) v i = 3.0 m v(s + n)/n 23 26 - db v i = 1 mv (s + n)/n - 60 - db optimum source impedance z source - 50 -w noise factor optimum noise impedance nf - 6 - db af output voltage v i = 100 m vv o 75 90 - mv total harmonic distortion v i = 30 m v to 50 mv thd - 0.8 - % v i = 1 mv; d f = 75 khz thd - 3 - % v i = 100 mv; d f = 75 khz thd - 3 - % am suppression note 2 rf input signal v i = 100 m v to 10 mv ams - 50 - db oscillator voltage (pin 18) f osc = 100 mhz v osc - 220 - mv v p = 1.5 v v osc 100 -- mv if rejection ratio if rr - 60 - db afc f osc = 111.2 mhz v 17 = 1.4 v d f -- 620 - khz v 17 = 0.2 v d f -+ 420 - khz
june 1989 12 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5591 notes to the ac characteristics 1. . 2. am suppression is measured at: f mod = 400 hz, m = 0.3 for am; f mod = 1 khz, d f = 75 khz for fm. temperature behaviour - 15 to + 60 c (only the ic) rf sensitivity - 3 db limiting d v i -- 6 - db output voltage v i = 100 m v d v o -- 2 - db oscillator frequency d f osc -- 0.3 - % supply voltage behaviour v p = 1.8 to 15 v rf sensitivity - 3 db limiting d v i - 6 - db output voltage v i = 100 m v d v o - 0.5 - db oscillator frequency d f osc - 100 - khz oscillator voltage d v osc - 1.0 - db parameter conditions symbol min. typ. max. unit a v i at f i 455 khz = v i at f i 1mhz = ---------------------------------------------- =
june 1989 13 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5591 fig.5 test circuit.
june 1989 14 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5591 application information fig.6 application diagram.
june 1989 15 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5591 component data fig.7 fm bfp coil (l1). n1 = 4.5 l = 0.12 m h wire = 0.8 mm diameter diameter = 4.5 mm fig.8 am if coil (l2). toko sample no. 7mcs-7p. n1 = 132 n2 = 14 n3 = 9 c = 180 pf (internal) lprim = 660 m h fo = 468 khz wire = 0.07 mm diameter coil type 7p-toko material 7mcs fig.9 oscillator coil (l3). toko sample no. 7brs-7p. n1 = 86 n2 = 11 lprim = 270 m h wire = 0.07 mm diameter coil type 7p-toko material 7brs
june 1989 16 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5591 fig.10 fm if coil (l5). toko equivalent no. 119acs-30120m. n1 = 11 n2 = 2 c = 85 pf (internal) f o = 10.7 mhz fig.11 oscillator coil (l6). toko equivalent no. 301 sn-0100. n1 = 1.5 l = 0.03 m h fig.12 fm rf coil (l7). toko equivalent no. 301 sn-0200. n1 = 2.5 l = 0.05 m h
june 1989 17 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5591 f erroceptor coil l4: n1 = 105; n2 = 10; l = 625 m h c eramic f ilters am if (k1). sfz468 hl. fm if (k2). sfe10 . 7 ms2. fm detector (k3). cda10 . 7 mc1. t uning capacitors am 140/82 pf fm 2 20 pf
june 1989 18 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5591 fig.13 printed-circuit board component side, showing component layout. for circuit diagram see fig.6. physical dimensions of the printed circuit board = 5.0 8.1 cm. fig.14 printed-circuit board showing track side.
june 1989 19 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5591 fig.15 am signal levels. fig.16 fm signal levels.
june 1989 20 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5591 fig.17 signal and noise (v oaf ), noise (v on ); reference level 0 db = 100 mv, and total harmonic distortion (thd) as a function of input voltage (v i ) at pin 13. measured in test circuit fig.5. am agc is measured at f i = mhz; f mod = 1 khz; m = 0.3. am distortion is measured at f i = 1 mhz; f mod = 1 khz. fig.18 signal and noise (v oaf ), noise (v on ); reference level 0 db = 100 mv; am suppression (ams) and total harmonic distortion (thd) as a function of input voltage (v) at pin 1. measured in test circuit fig.5 at f i = 98 mhz; f mod = 1 khz; d f 22.5 khz. am suppression is measured at f mod = 400 hz, m= 0.3 for am; f mod = 1 khz, d f = 75 khz for fm.
june 1989 21 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5591 package outline unit a max. 1 2 b 1 cd e e m h l references outline version european projection issue date iec jedec eiaj mm inches dimensions (inch dimensions are derived from the original mm dimensions) sot146-1 92-11-17 95-05-24 a min. a max. b z max. w m e e 1 1.73 1.30 0.53 0.38 0.36 0.23 26.92 26.54 6.40 6.22 3.60 3.05 0.254 2.54 7.62 8.25 7.80 10.0 8.3 2.0 4.2 0.51 3.2 0.068 0.051 0.021 0.015 0.014 0.009 1.060 1.045 0.25 0.24 0.14 0.12 0.01 0.10 0.30 0.32 0.31 0.39 0.33 0.078 0.17 0.020 0.13 sc603 m h c (e ) 1 m e a l seating plane a 1 w m b 1 e d a 2 z 20 1 11 10 b e pin 1 index 0 5 10 mm scale note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included. (1) (1) (1) dip20: plastic dual in-line package; 20 leads (300 mil) sot146-1
june 1989 22 philips semiconductors product speci?cation am/fm radio receiver circuit TEA5591 soldering introduction there is no soldering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. however, wave soldering is not always suitable for surface mounted ics, or for printed-circuits with high population densities. in these situations reflow soldering is often used. this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our ic package databook (order code 9398 652 90011). soldering by dipping or by wave the maximum permissible temperature of the solder is 260 c; solder at this temperature must not be in contact with the joint for more than 5 seconds. the total contact time of successive solder waves must not exceed 5 seconds. the device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (t stg max ). if the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. repairing soldered joints apply a low voltage soldering iron (less than 24 v) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. if the temperature of the soldering iron bit is less than 300 c it may remain in contact for up to 10 seconds. if the bit temperature is between 300 and 400 c, contact may be up to 5 seconds. definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.

▲Up To Search▲

Price & Availability of TEA5591

	To Download TEA5591 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .